A possible mechanism of ultrafast amorphization in phase-change memory alloys: An ion slingshot from the crystalline to amorphous position

A. V. Kolobov, A. S. Mishchenko, P. Fons, S. M. Yakubenya, J. Tominaga

研究成果: Article査読

17 被引用数 (Scopus)

抄録

We propose that the driving force of the ultrafast crystalline-to-amorphous transition in phase-change memory alloys is caused by strained bonds existing in the (metastable) crystalline phase. For the prototypical example of Ge 2Sb2Te5, we demonstrate that upon breaking of the longer Ge-Te bond by photoexcitation, a Ge ion is shot from an octahedral crystalline to a tetrahedral amorphous position by the uncompensated force of strained short bonds. Subsequent lattice relaxation stabilizes the tetrahedral surroundings of the Ge atoms and ensures the long-term stability of the optically induced phase.

本文言語English
論文番号455209
ジャーナルJournal of Physics Condensed Matter
19
45
DOI
出版ステータスPublished - 2007 11月 14
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学

フィンガープリント

「A possible mechanism of ultrafast amorphization in phase-change memory alloys: An ion slingshot from the crystalline to amorphous position」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル