A schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure

J. Sailer, V. Lang, G. Abstreiter, G. Tsuchiya, K. M. Itoh, J. W. Ager, E. E. Haller, D. Kupidura, D. Harbusch, S. Ludwig, D. Bougeard

研究成果: Article査読

14 被引用数 (Scopus)

抄録

We report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using 28Si and 70Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin-free materials, making them promising hosts for solid-state based quantum information processing devices. The two-dimensional electron system exhibits a mobility of 18000 cm2/(V s) at a sheet carrier density of 4.6 × 1011 cm-2 at low temperatures. Feasibility of reliable gating is demonstrated by transport through split-gate structures realized with palladium Schottky top-gates which effectively control the two-dimensional electron system underneath. Our work forms the basis for the realization of an electrostatically defined quantum dot in a nuclear spin free environment.

本文言語English
ページ(範囲)61-63
ページ数3
ジャーナルPhysica Status Solidi - Rapid Research Letters
3
2-3
DOI
出版ステータスPublished - 2009

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学

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