A study of the crystalline growth of highly boron-doped CVD diamond: Preparation of graded-morphology diamond thin films

Yasuaki Einaga, Gyu Sik Kim, Soo Gil Park, Akira Fujishima

研究成果: Article

18 引用 (Scopus)

抄録

An investigation was made of graded-morphology diamond thin films deposited on Si substrates by use of the microwave plasma chemical vapor deposition (CVD) technique. The preparation of graded diamond thin films not only offers new perspectives into functional materials, but it also gives clues to the growth mechanism of CVD diamond. Although it is clear that the substrate temperature and the deposition time affect the grain size in particular, the difference depending on the boron concentration in the growing process was studied in the present work. As a result, in highly boron-doped (104 ppm) diamond films, the Raman peak which was ascribed to the boron-doping was not observed at the very initial growth stage. However, the crystal growth process was almost irrelevant for the boron-doping quantity. Furthermore, we showed the morphology dependence of electrochemical properties as one example of the excellent functions of the graded-morphology highly boron-doped diamond film.

元の言語English
ページ(範囲)306-311
ページ数6
ジャーナルDiamond and Related Materials
10
発行部数3-7
DOI
出版物ステータスPublished - 2001 3
外部発表Yes

Fingerprint

Diamond
Boron
Diamond films
Chemical vapor deposition
Diamonds
boron
diamonds
vapor deposition
Crystalline materials
Thin films
preparation
thin films
diamond films
Doping (additives)
Functional materials
Substrates
Crystallization
Electrochemical properties
Crystal growth
crystal growth

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

これを引用

A study of the crystalline growth of highly boron-doped CVD diamond : Preparation of graded-morphology diamond thin films. / Einaga, Yasuaki; Kim, Gyu Sik; Park, Soo Gil; Fujishima, Akira.

:: Diamond and Related Materials, 巻 10, 番号 3-7, 03.2001, p. 306-311.

研究成果: Article

@article{050c680777e647b79a0e8d307face557,
title = "A study of the crystalline growth of highly boron-doped CVD diamond: Preparation of graded-morphology diamond thin films",
abstract = "An investigation was made of graded-morphology diamond thin films deposited on Si substrates by use of the microwave plasma chemical vapor deposition (CVD) technique. The preparation of graded diamond thin films not only offers new perspectives into functional materials, but it also gives clues to the growth mechanism of CVD diamond. Although it is clear that the substrate temperature and the deposition time affect the grain size in particular, the difference depending on the boron concentration in the growing process was studied in the present work. As a result, in highly boron-doped (104 ppm) diamond films, the Raman peak which was ascribed to the boron-doping was not observed at the very initial growth stage. However, the crystal growth process was almost irrelevant for the boron-doping quantity. Furthermore, we showed the morphology dependence of electrochemical properties as one example of the excellent functions of the graded-morphology highly boron-doped diamond film.",
keywords = "Crystalline growth, Graded-morphology, Highly boron-doped diamond film",
author = "Yasuaki Einaga and Kim, {Gyu Sik} and Park, {Soo Gil} and Akira Fujishima",
year = "2001",
month = "3",
doi = "10.1016/S0925-9635(01)00375-2",
language = "English",
volume = "10",
pages = "306--311",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
number = "3-7",

}

TY - JOUR

T1 - A study of the crystalline growth of highly boron-doped CVD diamond

T2 - Preparation of graded-morphology diamond thin films

AU - Einaga, Yasuaki

AU - Kim, Gyu Sik

AU - Park, Soo Gil

AU - Fujishima, Akira

PY - 2001/3

Y1 - 2001/3

N2 - An investigation was made of graded-morphology diamond thin films deposited on Si substrates by use of the microwave plasma chemical vapor deposition (CVD) technique. The preparation of graded diamond thin films not only offers new perspectives into functional materials, but it also gives clues to the growth mechanism of CVD diamond. Although it is clear that the substrate temperature and the deposition time affect the grain size in particular, the difference depending on the boron concentration in the growing process was studied in the present work. As a result, in highly boron-doped (104 ppm) diamond films, the Raman peak which was ascribed to the boron-doping was not observed at the very initial growth stage. However, the crystal growth process was almost irrelevant for the boron-doping quantity. Furthermore, we showed the morphology dependence of electrochemical properties as one example of the excellent functions of the graded-morphology highly boron-doped diamond film.

AB - An investigation was made of graded-morphology diamond thin films deposited on Si substrates by use of the microwave plasma chemical vapor deposition (CVD) technique. The preparation of graded diamond thin films not only offers new perspectives into functional materials, but it also gives clues to the growth mechanism of CVD diamond. Although it is clear that the substrate temperature and the deposition time affect the grain size in particular, the difference depending on the boron concentration in the growing process was studied in the present work. As a result, in highly boron-doped (104 ppm) diamond films, the Raman peak which was ascribed to the boron-doping was not observed at the very initial growth stage. However, the crystal growth process was almost irrelevant for the boron-doping quantity. Furthermore, we showed the morphology dependence of electrochemical properties as one example of the excellent functions of the graded-morphology highly boron-doped diamond film.

KW - Crystalline growth

KW - Graded-morphology

KW - Highly boron-doped diamond film

UR - http://www.scopus.com/inward/record.url?scp=0035270375&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035270375&partnerID=8YFLogxK

U2 - 10.1016/S0925-9635(01)00375-2

DO - 10.1016/S0925-9635(01)00375-2

M3 - Article

AN - SCOPUS:0035270375

VL - 10

SP - 306

EP - 311

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 3-7

ER -