A study on high temperature CMOS circuits for sensor applications with SDB-SOI wafer

Yoshinori Matsumoto, Yasuo Kitayama, Akihisa Kawamura, Makoto Ishida

研究成果: Article査読

3 被引用数 (Scopus)

抄録

High temperature CMOS circuits for sensor applications have been fabricated using Silicon-Direct-Bonding (SDB) SOI wafers. A novel SOI-MOSFET structure was fabricated on silicon film of 800nm in thickness above a buried oxide layer of lm in thickness. The MOSFET was designed in order to remove Kink-effect and parasitic bipolar transistor effect, and the fabrication process was optimized by process simulator(SUPREM III). The signal conditioning circuits (Operational amplifier and C-F converter) for sensor applications were designed and fabricated with the MOSFET. These MOSFET and signal conditioning circuits were operated up to 300°C. The temperature dependence of the MOSFET and the characteristic of the circuits were evaluated from room temperature to 300°C.

本文言語English
ページ(範囲)377-383
ページ数7
ジャーナルieej transactions on sensors and micromachines
117
7
DOI
出版ステータスPublished - 1997
外部発表はい

ASJC Scopus subject areas

  • 機械工学
  • 電子工学および電気工学

フィンガープリント

「A study on high temperature CMOS circuits for sensor applications with SDB-SOI wafer」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル