A unified simulation of schottky and ohmic contacts

Kazuya Matsuzawa, Ken Uchida, Akira Nishiyama

    研究成果: Article

    16 引用 (Scopus)

    抜粋

    The Schottky contact is an important consideration in the development of semiconductor devices. This paper shows that a practical Schottky contact model is available for a unified device simulation of Schottky and ohmic contacts. The present model includes the thermionic emission at the metal/semiconductor interface and the spatially distributed tunneling calculated at each grid of semiconductor around the interface. Simulation results of rectifying characteristics of Schottky barrier diodes (SBD's) and contact resistances under high impurity concentration conditions are reasonable compared with measurements. As examples of application to actual devices the influence of the contact resistance on salicided MOSFET's with source/drain extension and the immunity of Schottky barrier tunnel transistors (SBTT's) from the shortchannel effect (SCE) are demonstrated.

    元の言語English
    ページ数1
    ジャーナルIEEE Transactions on Electron Devices
    47
    発行部数1
    出版物ステータスPublished - 2000 12 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    フィンガープリント A unified simulation of schottky and ohmic contacts' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Matsuzawa, K., Uchida, K., & Nishiyama, A. (2000). A unified simulation of schottky and ohmic contacts. IEEE Transactions on Electron Devices, 47(1).