抄録
In this study, we propose an advanced tunnel oxide passivated contact (TOPCon) solar cell structure for bifacial usage. The proposed structure, named advanced industrial TOPCon (Ai-TOPCon), adopts rear-side local carrier-selective contacts to avoid rear-side light-absorption loss. Ai-TOPCon features larger rear-side light currents and improves the power density by approximately 0.28 mW/cm2 for bifacial usage in a 20% albedo scenario. Several types of Ai-TOPCon and industrial TOPCon (i-TOPCon) are evaluated, and the optimization of the structure resulted in a power density of 28.73 mW/cm2. Loss analysis revealed that the reduced Auger recombination volume was the main factor contributing to the improvement of cell performance, and the light-absorption problem was solved by reducing the rear-side heavy-doped region.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 2481-2487 |
| ページ数 | 7 |
| ジャーナル | IEEE Transactions on Electron Devices |
| 巻 | 69 |
| 号 | 5 |
| DOI | |
| 出版ステータス | Published - 2022 5月 1 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 電子工学および電気工学