Advanced quasi-self-consistent Monte Carlo simulations on high-frequency performance of nanometer-scale GaN HEMTs considering local phonon distribution

Ryosuke Sawabe, Naoto Ito, Yuji Awano

    研究成果: Conference contribution

    1 被引用数 (Scopus)

    抄録

    As a means of investigating both the electrical and thermal properties in nanometer-scale electron devices within a reasonable computing time, we previously proposed a quasi-self-consistent Monte Carlo simulation method, including spatially dependent electron-phonon scattering rates, and a replica technique for phonon generation which enable us to calculate long-time phonon transport. Using this advanced Monte Carlo method, we succeeded in simulating the high-frequency characteristics of nanometer-scale gallium-nitride high-electron-mobility transistors (HEMTs). The simulations suggest that a shorter gate HEMT exhibits larger performance degradation in cut-off frequency due to the local-heating effect. We also report Monte Carlo simulations of nm-scale GaN HEMTs with heat-removal structures on the surface.

    本文言語English
    ホスト出版物のタイトル2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
    出版社Institute of Electrical and Electronics Engineers Inc.
    ページ285-288
    ページ数4
    ISBN(電子版)9784863486102
    DOI
    出版ステータスPublished - 2017 10月 25
    イベント2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 - Kamakura, Japan
    継続期間: 2017 9月 72017 9月 9

    出版物シリーズ

    名前International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
    2017-September

    Other

    Other2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
    国/地域Japan
    CityKamakura
    Period17/9/717/9/9

    ASJC Scopus subject areas

    • 電子工学および電気工学
    • コンピュータ サイエンスの応用
    • モデリングとシミュレーション

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