Alkali incorporation control in Cu (In,Ga) Se2 thin films using silicate thin layers and applications in enhancing flexible solar cell efficiency

Shogo Ishizuka, Akimasa Yamada, Koji Matsubara, Paul Fons, Keiichiro Sakurai, Shigeru Niki

研究成果: Article査読

60 被引用数 (Scopus)

抄録

Control of the alkali doping level in Cu (In,Ga) Se2 (CIGS) films was demonstrated using alkali-silicate thin layers of various thickness deposited on substrates prior to the sputtering of the Mo back contact layer. Not only the alkali density in the CIGS film, but also the Ga composition distribution in CIGS films, CIGS grain size, and consequent photovoltaic performance showed variations with the silicate layer thickness. Using alkali-silicate thin layers as an alkali source material, 17.4% and 17.7% efficiency flexible CIGS solar cells have been demonstrated on Ti and zirconia substrates, respectively.

本文言語English
論文番号124105
ジャーナルApplied Physics Letters
93
12
DOI
出版ステータスPublished - 2008
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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