All-optical switches on a silicon chip realized using photonic crystal nanocavities

Takasumi Tanabe, Masaya Notomi, Satoshi Mitsugi, Akihiko Shinya, Eiichi Kuramochi

研究成果: Article査読

371 被引用数 (Scopus)

抄録

We demonstrate all-optical switching in the telecommunication band, in silicon photonic crystals at high speed (∼50 ps), with extremely low switching energy (a few 100 fJ), and high switching contrast (∼10 dB). The devices consist of ultrasmall high-quality factor nanocavities connected to input and output waveguides. Switching is induced by a nonlinear refractive-index change caused by the plasma effect of carriers generated by two-photon absorption in silicon. The high-quality factor and small mode volume led to an extraordinarily large reduction in switching energy. The estimated internal switching energy in the nanocavity is as small as a few tens of fJ, indicating that further reduction on the operating energy is possible.

本文言語English
論文番号151112
ページ(範囲)1-3
ページ数3
ジャーナルApplied Physics Letters
87
15
DOI
出版ステータスPublished - 2005 10月 10
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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