All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip

Takasumi Tanabe; Hisashi Sumikura; Hideaki Taniyama; Akihiko Shinya; Masaya Notomi

doi:10.1063/1.3357427

All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip

Takasumi Tanabe, Hisashi Sumikura, Hideaki Taniyama, Akihiko Shinya, Masaya Notomi

研究成果: Article › 査読

99 被引用数 (Scopus)

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We demonstrate channel selective 0.1-Gb/s photoreceiver operation at telecom wavelength using a silicon high- Q photonic crystal nanocavity with a laterally integrated p-i-n diode. Due to the good crystal property of silicon the measured dark current is only 15 pA. The linear and nonlinear characteristics are investigated in detail, in which we found that the photocurrent is enhanced of more than 10⁵ due to the ultrahigh- Q (Q≃ 10⁵). With the help of two-photon absorption, which is visible at a surprisingly low input power of 10^-8 W, the quantum efficiency of this device reaches ∼10%.

本文言語	English
論文番号	101103
ジャーナル	Applied Physics Letters
巻	96
号	10
DOI	https://doi.org/10.1063/1.3357427
出版ステータス	Published - 2010
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.3357427

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AU - Tanabe, Takasumi

AU - Sumikura, Hisashi

AU - Taniyama, Hideaki

AU - Shinya, Akihiko

AU - Notomi, Masaya

PY - 2010

Y1 - 2010

N2 - We demonstrate channel selective 0.1-Gb/s photoreceiver operation at telecom wavelength using a silicon high- Q photonic crystal nanocavity with a laterally integrated p-i-n diode. Due to the good crystal property of silicon the measured dark current is only 15 pA. The linear and nonlinear characteristics are investigated in detail, in which we found that the photocurrent is enhanced of more than 105 due to the ultrahigh- Q (Q≃ 105). With the help of two-photon absorption, which is visible at a surprisingly low input power of 10-8 W, the quantum efficiency of this device reaches ∼10%.

AB - We demonstrate channel selective 0.1-Gb/s photoreceiver operation at telecom wavelength using a silicon high- Q photonic crystal nanocavity with a laterally integrated p-i-n diode. Due to the good crystal property of silicon the measured dark current is only 15 pA. The linear and nonlinear characteristics are investigated in detail, in which we found that the photocurrent is enhanced of more than 105 due to the ultrahigh- Q (Q≃ 105). With the help of two-photon absorption, which is visible at a surprisingly low input power of 10-8 W, the quantum efficiency of this device reaches ∼10%.

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All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip

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