Amorphization processes in ion implanted Si: Temperature dependence

Teruaki Motooka, Fumihiko Kobayashi, Paul Fons, Takashi Tokuyama, Nobuyoshi Natsuaki

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Temperature dependence of amorphization processes in ion-implanted Si has been investigated using Raman spectroscopy together with cross-sectional transmission microscopy. The crystal Si Raman peak decreased and the amorphous Si (a-Si) peak became predominant as the substrate temperture was decreased from 23 °C to — 200°C during 200 keV Si+ ion implantation with a dose of 5 x 1014 cm-2. Based on the analysis of bond angle deviations derived from the a-Si peaks, we have proposed a model in which an accumulation of small defects induces amorphization at low temperatures, while at higher temperatures larger defect complexes are formed and an accumulation of them gives rise to defected amorphous Si.

本文言語English
ページ(範囲)3617-3620
ページ数4
ジャーナルJapanese journal of applied physics
30
12
DOI
出版ステータスPublished - 1991 12
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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