An EXAFS and XANES study of MBE grown Cu-doped ZnO

P. Fons, A. Yamada, K. Iwata, K. Matsubara, S. Niki, K. Nakahara, H. Takasu

研究成果: Article査読

25 被引用数 (Scopus)

抄録

The wide bandgap semiconductor, ZnO, is intrinsically n-type and one of the remaining hurdles to be overcome before it can be used for optoelectronic applications is achieving p-type doping. A potential candidate for a p-type dopant is Cu. Towards this end, X-ray near-edge absorption (XANES) has been used to determine changes in valency of Cu in molecular beam epitaxial grown ZnO as a function of growth parameters. Growth parameters varied include the Cu flux which was varied over roughly three orders of magnitude TCu = 800-1000 °C and two substrate temperatures: 300 and 600 °C. XANES measurements confirmed that Cu was in the +1 valence state for all as-grown samples. Preliminary EXAFS measurements also demonstrated that Cu incorporated into a Zn-atom position substitutionally. X-ray diffraction also indicated significant phase separation with the presence of both metallic Cu and CuO indicated for Cu concentrations > 3×1021 cm-3.

本文言語English
ページ(範囲)190-194
ページ数5
ジャーナルNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
199
DOI
出版ステータスPublished - 2003 1月 1
外部発表はい

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 器械工学

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