An integrated MOS magnetic sensor with chopper-stabilized amplifier

Shoji Kawahito, Kohji Hayakawa, Yoshinori Matsumoto, Mákoto Ishida, Yoshiaki Tadokoro

研究成果: Article査読

9 被引用数 (Scopus)

抄録

This paper describes an integrated MOS magnetic sensor with chopper-stabilized amplifier. The integrated magnetic sensor has been fabricated using the standard n-channel E/D(enhancement/depletion) MOS process technology. A sensing element with a dual-source dual-drain structure in the MOSFET suitable for the chopper driving has been developed, and is called split-source-drain MAGFET. A depletion-mode structure is used for the MAGFET to reduce the 1/f noise by applying a negative gate bias voltage. The integration of the chopper-stabilized amplifier with the silicon magnetic sensor leads to a reduction of the 1/f noise, the offset, and the offset drift of the amplifier, as well as to an enhancement of the equivalent sensitivity. The integrated magnetic sensor has a sensitivity of 5.5 V/T and the resolution of about 50 μT with 1 kHz bandwidth.

本文言語English
ページ(範囲)1-12
ページ数12
ジャーナルSensors and Materials
8
1
出版ステータスPublished - 1996 12月 1
外部発表はい

ASJC Scopus subject areas

  • 器械工学
  • 材料科学(全般)

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