An on-chip self-powered memory system fully realizable in standard CMOS technology is presented. The memory cells consist of a MOS capacitor operated as an antifuse, which is written by applying high voltage between its terminals during tens of milliseconds. The full system comprises an on-chip solar cell, a cross coupled charge pump DC-DC converter, stacked MOSFET high voltage drivers and CMOS anti-fuse one-time programmable memory cells. The writing of each memory cell can be commanded through a digital signal provided by an on-chip control circuit or other on-chip sensors. The proposed memory system is intended to be integrated in small autonomous on-chip devices. This paper describes each of the components that build up the proposed system and demonstrates its feasibility through results of its implementation in 0.18 um CMOS technology.