Analysis and optimization of BiCMOS gate circuits

Tadahiro Kuroda, Yoshinori Sakata, Kenji Matsuo

研究成果: Conference article査読

1 被引用数 (Scopus)

抄録

An optimization strategy for BiCMOS gates is described. A simple gate delay model is proposed whose parameters can be extracted with SPICE simulations. Therefore a device model can be precise, while keeping the optimization procedure simple and unchangeable in any device generation. With the proposed procedure, BiCMOS gate delays can be calculated quickly and optimized efficiently just by looking up design tables that are obtained easily and are applicable to any design with the same device technology. The sizing strategy of cascaded drivers is also studied. BiCMOS-BiCMOS cascaded buffers are optimized when the scale-up factor is e2.3, while BiCMOS-CMOS cascaded buffers become the fastest when the scale-up factor, e1.6, is employed. The strategy was successfully applied to the design of high-speed BiCMOS static-RAM (SRAM) macros for standard cell libraries.

本文言語English
ページ(範囲)2112-2115
ページ数4
ジャーナルProceedings - IEEE International Symposium on Circuits and Systems
4
出版ステータスPublished - 1991 12 1
外部発表はい
イベント1991 IEEE International Symposium on Circuits and Systems Part 4 (of 5) - Singapore, Singapore
継続期間: 1991 6 111991 6 14

ASJC Scopus subject areas

  • 電子工学および電気工学

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