Analytical drain current and threshold voltage model and device design of short-channel Si nanowire transistors

Chika Tanaka, Daisuke Hagishima, Ken Uchida, Toshinori Numata

    研究成果: Article査読

    抄録

    Device design for cylindrical Si nanowire field-effect-transistors is studied in short channel regime of 22 nm technology generations and beyond. A two-dimensional quasi-analytical model reveals that a critical minimum channel length is 1.5 times as long as a Si nanowire diameter to suppress the short channel effects. The quantum mechanical effect due to the structural carrier confinement in nanowire with narrow diameter deteriorates both the threshold voltage roll-offs and the subthreshold characteristics.

    本文言語English
    ページ(範囲)27-31
    ページ数5
    ジャーナルSolid-State Electronics
    86
    DOI
    出版ステータスPublished - 2013

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • 電子工学および電気工学
    • 材料化学

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