Anion photoelectron spectroscopy of transition metal- and lanthanide metal-silicon clusters: M Sin- (n=6-20)

Kiichirou Koyasu, Junko Atobe, Shunsuke Furuse, Atsushi Nakajima

研究成果: Article

90 引用 (Scopus)

抄録

The electronic properties of silicon clusters containing a transition or lanthanide metal atom from group 3, 4, or 5, M Sin, (M=Sc, Ti, V, Y, Zr, Nb, Lu, Tb, Ho, Hf, and Ta) were investigated by anion photoelectron spectroscopy at 213 nm. In the case of the group 3 elements Sc, Y, Lu, Tb, and Ho, the threshold energy of electron detachment exhibits local maxima at n=10 and 16, while in case of the group 4 elements Ti, Zr, and Hf, the threshold energy exhibits a local minimum at n=16, associated with the presence of a small bump in the spectrum. These electronic characteristics of M Sin are closely related to a cooperative effect between their geometric and electronic structures, which is discussed, together with the results of experiments that probe their geometric stability via their reactivity to H2O adsorption, and with theoretical calculations.

元の言語English
記事番号214301
ジャーナルJournal of Chemical Physics
129
発行部数21
DOI
出版物ステータスPublished - 2008

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Lanthanoid Series Elements
Silicon
Photoelectron spectroscopy
Electronic properties
Electronic structure
Transition metals
Anions
Metals
transition metals
photoelectron spectroscopy
anions
Adsorption
Atoms
Electrons
silicon
metals
thresholds
Experiments
electronics
detachment

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

これを引用

Anion photoelectron spectroscopy of transition metal- and lanthanide metal-silicon clusters : M Sin- (n=6-20). / Koyasu, Kiichirou; Atobe, Junko; Furuse, Shunsuke; Nakajima, Atsushi.

:: Journal of Chemical Physics, 巻 129, 番号 21, 214301, 2008.

研究成果: Article

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