Anion vacancies in CuInSe2

S. Niki, R. Suzuki, S. Ishibashi, T. Ohdaira, P. J. Fons, A. Yamada, H. Oyanagi, T. Wada, R. Kimura, T. Nakada

研究成果: Article査読

29 被引用数 (Scopus)

抄録

Effects of the Cu2-xSe surface phase, the post-growth air-annealing and the Na incorporation on the growth and properties of CuInSe2 films have been systematically investigated by various defect-sensitive characterization techniques such as low temperature photoluminescence and positron annihilation. The presence of the Cu-Se surface phase, the post-growth air-annealing and the Na incorporation all provided significant changes in photoluminescence spectra. Decrease in positron lifetime and reduction of twin density were found to occur simultaneously, along with the changes in photoluminescence spectra. Change in photoluminescence spectra and the corresponding decrease in positron lifetime indicate the annihilation of Se-vacancies; the control of Se-vacancy is a key issue to be addressed for improving the electrical, optical and structural properties of CuInSe2 films.

本文言語English
ページ(範囲)129-134
ページ数6
ジャーナルThin Solid Films
387
1-2
DOI
出版ステータスPublished - 2001 5 29
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

フィンガープリント

「Anion vacancies in CuInSe<sub>2</sub>」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル