Anisotropic hole velocity overshoot in GaAs and Si

Y. Tagawa, Y. Awano, N. Yokoyama

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We investigate Full Band Monte Carlo simulations of the anisotropic transient hole transport in GaAs and Si for the first time. The simulation of transient hole transport in GaAs shows that under a constant electric field of 100 kV/cm, the maximum drift velocity reaches 2.2 × 107 cm/s at the room temperature, about 3 times higher than the steady-state saturation velocity. We calculated the direction dependence of the applied electric field on the hole overshoot phenomena and found that the peak velocity at the electric field applied along [100] is about 30% higher than in the case of [110], although the saturation velocities are almost the same. Simulations of Si hole transport showed a similar type of directional dependence.

本文言語English
ページ(範囲)545-547
ページ数3
ジャーナルPhysica Status Solidi (B) Basic Research
204
1
DOI
出版ステータスPublished - 1997 11
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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