Atomically-controlled Fe3Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application

Masanobu Miyao, Yuichiro Ando, Koji Ueda, Kohei Hamaya, Yukio Nozaki, Taizoh Sadoh, Kimihide Matsuyama, Kazumasa Narumi, Yoshihito Maeda

研究成果: Conference contribution

抄録

Recent our progress in low temperature molecular beam epitaxy of magnetic silicide (Fe3Si) on group-IV-semiconductor (Ge) was reviewed. By optimizing beam flux ratio (Fe:Si=3:l) and growth temperature (130 °C), a high quality hybrid structure, i.e., DO3-type Fe3Si on Ge with an atomically flat interface, was achieved. Excellent magnetic properties with a small coercivity (0.8 Oe) and electrical properties with Schottky barrier height of 0.56 eV were obtained. The ratio of the on-current to the off-current of Schottky diode was the order of 104. These results will be a powerful tool to open up group-IV-semiconductor spin-transistors, consisting of Ge channel with high mobility and Fe3Si source/drain for spin-injection.

元の言語English
ホスト出版物のタイトルInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
ページ688-691
ページ数4
DOI
出版物ステータスPublished - 2008
外部発表Yes
イベント2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
継続期間: 2008 10 202008 10 23

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
China
Beijing
期間08/10/2008/10/23

Fingerprint

hybrid structures
Transistors
transistors
Semiconductor materials
Growth temperature
Schottky diodes
Coercive force
Molecular beam epitaxy
coercivity
Magnetic properties
Diodes
Electric properties
molecular beam epitaxy
electrical properties
injection
Fluxes
magnetic properties
Temperature
temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

これを引用

Miyao, M., Ando, Y., Ueda, K., Hamaya, K., Nozaki, Y., Sadoh, T., ... Maeda, Y. (2008). Atomically-controlled Fe3Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application. : International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT (pp. 688-691). [4734647] https://doi.org/10.1109/ICSICT.2008.4734647

Atomically-controlled Fe3Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application. / Miyao, Masanobu; Ando, Yuichiro; Ueda, Koji; Hamaya, Kohei; Nozaki, Yukio; Sadoh, Taizoh; Matsuyama, Kimihide; Narumi, Kazumasa; Maeda, Yoshihito.

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT. 2008. p. 688-691 4734647.

研究成果: Conference contribution

Miyao, M, Ando, Y, Ueda, K, Hamaya, K, Nozaki, Y, Sadoh, T, Matsuyama, K, Narumi, K & Maeda, Y 2008, Atomically-controlled Fe3Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application. : International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT., 4734647, pp. 688-691, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, Beijing, China, 08/10/20. https://doi.org/10.1109/ICSICT.2008.4734647
Miyao M, Ando Y, Ueda K, Hamaya K, Nozaki Y, Sadoh T その他. Atomically-controlled Fe3Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application. : International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT. 2008. p. 688-691. 4734647 https://doi.org/10.1109/ICSICT.2008.4734647
Miyao, Masanobu ; Ando, Yuichiro ; Ueda, Koji ; Hamaya, Kohei ; Nozaki, Yukio ; Sadoh, Taizoh ; Matsuyama, Kimihide ; Narumi, Kazumasa ; Maeda, Yoshihito. / Atomically-controlled Fe3Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT. 2008. pp. 688-691
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AU - Nozaki, Yukio

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AU - Matsuyama, Kimihide

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