Atomically-controlled Fe₃Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application

Engineering & Materials Science

• Semiconductor materials 61%
• Transistors 59%
• Growth temperature 56%
• Molecular beam epitaxy 54%
• Coercive force 48%
• Silicides 47%
• Magnetic properties 42%
• Electric properties 37%
• Diodes 32%
• Fluxes 28%
• Temperature 13%

Chemical Compounds

• Molecular Beam Epitaxy 100%
• Schottky Barrier 95%
• Coercivity 81%
• Electrical Property 58%
• Magnetic Property 56%
• Compound Mobility 53%
• Application 21%

Physics & Astronomy

• hybrid structures 87%
• transistors 55%
• Schottky diodes 36%
• silicides 36%
• coercivity 32%
• molecular beam epitaxy 29%
• electrical properties 25%
• injection 25%
• magnetic properties 24%
• temperature 10%