抄録
We demonstrate that annealing of a vicinal Si(111) surface at about 800 °C with a direct current in the direction that ascends the kinks enhances the formation of atomically straight step edges over micrometer lengths, while annealing with a current in the opposite direction does not. Every straight step edge has the same atomic configuration U(2, 0), which is useful as a template for the formation of a variety of nanostructures. A phenomenological model based on electromigration of charged mobile atoms explains the observed current-polarity dependent behavior.
| 本文言語 | English |
|---|---|
| 論文番号 | 031903 |
| ジャーナル | Applied Physics Letters |
| 巻 | 87 |
| 号 | 3 |
| DOI | |
| 出版ステータス | Published - 2005 7月 18 |
ASJC Scopus subject areas
- 物理学および天文学（その他）