Atomically straight steps on vicinal Si(111) surfaces prepared by step-parallel current in the kink-up direction

S. Yoshida, T. Sekiguchi, K. M. Itoh

研究成果: Article査読

28 被引用数 (Scopus)

抄録

We demonstrate that annealing of a vicinal Si(111) surface at about 800 °C with a direct current in the direction that ascends the kinks enhances the formation of atomically straight step edges over micrometer lengths, while annealing with a current in the opposite direction does not. Every straight step edge has the same atomic configuration U(2, 0), which is useful as a template for the formation of a variety of nanostructures. A phenomenological model based on electromigration of charged mobile atoms explains the observed current-polarity dependent behavior.

本文言語English
論文番号031903
ジャーナルApplied Physics Letters
87
3
DOI
出版ステータスPublished - 2005 7 18

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Atomically straight steps on vicinal Si(111) surfaces prepared by step-parallel current in the kink-up direction」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル