Atomistic study of the morphology of graphene on Si and SiC substrates

S. Seto, N. Arai, K. Shintani

研究成果: Conference contribution

抄録

The morphology of graphene on Si and SiC substrates is investigated using molecular-dynamics simulation. The effects of the size and orientation of graphene on its roughness, distance from the substrate, and periodic structure are examined. The roughness and distance show the size dependency which agrees with the size dependency of the ratio of the periphery length of graphene to its area. It is found there are some cases in which the roughness of graphene can be suppressed.

本文言語English
ホスト出版物のタイトルCarbon Nanotubes, Graphene and Related Nanostructures
ページ91-96
ページ数6
DOI
出版ステータスPublished - 2012
外部発表はい
イベント2011 MRS Fall Meeting - Boston, MA, United States
継続期間: 2011 11 282011 12 2

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1407
ISSN(印刷版)0272-9172

Conference

Conference2011 MRS Fall Meeting
国/地域United States
CityBoston, MA
Period11/11/2811/12/2

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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