Band gap narrowing and electron doping by potassium encapsulation into single-walled carbon nanotubes

Hideyuki Maki, Satoru Suzuki, Tetsuya Sato, Koji Ishibashi

研究成果: Article査読

9 被引用数 (Scopus)

抄録

We have fabricated field-effect transistors (FETs) with pristine and potassium-encapsulated single-walled carbon nanotube (SWNT) films, and the effects of potassium encapsulation are investigated. The transformation from a unipolar characteristic to an ambipolar characteristic by potassium encapsulation is observed from the measurement of the gate voltage dependence (Vgs) of the current (I) for SWNT-film FETs. This result indicates that the potassium encapsulation into SWNTs causes band gap narrowing. In addition, the n-type region of the I-Vgs, curve is expanded during annealing of the devices; electron transfer from potassium to SWNTs occurs owing to the removal of the adsorbates. The adsorbate removal is confirmed by photoemission spectroscopy measurement. The FET with an individual potassium-encapsulated SWNT shows an ambipolar characteristic.

本文言語English
ページ(範囲)2486-2489
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
46
4 B
DOI
出版ステータスPublished - 2007 4 24

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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