We have grown the compound semiconductor ZnO1-xSex by MBE. A decrease in bandgap energy with increasing Se composition x was observed and a large bowing parameter of 12.7 ± 1.6 eV was measured. This indicates the possibility of bandgap bowing in the ZnO1-xSex compound system and may open up new bandgap control techniques that allow bandgap changes to be made with small lattice mismatch.
|ジャーナル||Physica Status Solidi (B) Basic Research|
|出版ステータス||Published - 2002|
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