Behavior of silicon and germanium clusters on a C60 fullerene

M. Ohara, Y. Nakamura, Y. Negishi, K. Miyajima, A. Nakajima, K. Kaya

研究成果: Article査読

14 被引用数 (Scopus)

抄録

Behavior of silicon (Si) and germanium (Ge) atoms (or clusters) on the surface of a C60 fullerene has been revealed by using time-of-flight mass spectroscopy and photoelectron spectroscopy. The mixed clusters of C60Sin and C60Gem were generated by two-lasers vaporization of a molded C60 rod and a Si (or a Ge) rod in He carrier gas. The size distributions of anionic and cationic C60Sin/C60Gem clusters monotonically decreased with the number of Si/Ge atoms, and were limited only up to n = 4 and m = 3. The photoelectron spectra of C60Sin- and C60Gem- are similar to that of pure C60- at m = 3, 4, whereas the spectra at n, m = 1, 2 are different from that of C60-. These results show that Si/Ge atoms assemble together into Si/Ge clusters on the C60 cage with an increase in the number of Si/Ge atoms.

本文言語English
ページ(範囲)4498-4501
ページ数4
ジャーナルJournal of Physical Chemistry A
106
18
DOI
出版ステータスPublished - 2002 5 9

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

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