Behavior of silicon and germanium clusters on a C60 fullerene

M. Ohara, Y. Nakamura, Y. Negishi, K. Miyajima, A. Nakajima, K. Kaya

研究成果: Article

14 引用 (Scopus)


Behavior of silicon (Si) and germanium (Ge) atoms (or clusters) on the surface of a C60 fullerene has been revealed by using time-of-flight mass spectroscopy and photoelectron spectroscopy. The mixed clusters of C60Sin and C60Gem were generated by two-lasers vaporization of a molded C60 rod and a Si (or a Ge) rod in He carrier gas. The size distributions of anionic and cationic C60Sin/C60Gem clusters monotonically decreased with the number of Si/Ge atoms, and were limited only up to n = 4 and m = 3. The photoelectron spectra of C60Sin- and C60Gem- are similar to that of pure C60- at m = 3, 4, whereas the spectra at n, m = 1, 2 are different from that of C60-. These results show that Si/Ge atoms assemble together into Si/Ge clusters on the C60 cage with an increase in the number of Si/Ge atoms.

ジャーナルJournal of Physical Chemistry A
出版物ステータスPublished - 2002 5 9

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

フィンガープリント Behavior of silicon and germanium clusters on a C<sub>60</sub> fullerene' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Ohara, M., Nakamura, Y., Negishi, Y., Miyajima, K., Nakajima, A., & Kaya, K. (2002). Behavior of silicon and germanium clusters on a C60 fullerene. Journal of Physical Chemistry A, 106(18), 4498-4501.