TY - JOUR
T1 - Bi-Substitution effect in La-Sr-Mn-O thin films for bolometric applications
AU - Hayashi, Ken Ichi
AU - Ohta, Eiji
AU - Wada, Hideo
PY - 2001/3/1
Y1 - 2001/3/1
N2 - La0.7Sr0.3MnO3-δ (LSMO) films have a large temperature coefficient of resistance (TCR: defined as 1/R dR/dT) at near room temperature. Bi0.34La0.33Sr0.33MnO3-δ (BLSMO) film in which La in LSMO is substituted by Bi, was deposited at low temperature, 400°C, by a laser ablation method. The BLSMO film on the SiO2/Si (100) substrate is polycrystalline without any preferred orientations. The low-temperature deposition and the Bi substitution eliminate the Curie temperature of the BLSMO film, and raise its TCR. The film has a large TCR, more than 2%/K, in the wide temperature range of 10-150°C.
AB - La0.7Sr0.3MnO3-δ (LSMO) films have a large temperature coefficient of resistance (TCR: defined as 1/R dR/dT) at near room temperature. Bi0.34La0.33Sr0.33MnO3-δ (BLSMO) film in which La in LSMO is substituted by Bi, was deposited at low temperature, 400°C, by a laser ablation method. The BLSMO film on the SiO2/Si (100) substrate is polycrystalline without any preferred orientations. The low-temperature deposition and the Bi substitution eliminate the Curie temperature of the BLSMO film, and raise its TCR. The film has a large TCR, more than 2%/K, in the wide temperature range of 10-150°C.
KW - Bi-substitution effect
KW - Laser ablation
KW - Temperature coefficient of resistance
KW - Uncooled infrared bolometer sensor
KW - X-ray diffraction
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U2 - 10.1143/jjap.40.l219
DO - 10.1143/jjap.40.l219
M3 - Letter
AN - SCOPUS:0035272711
VL - 40
SP - L219-L221
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3 A
ER -