Bidirectional single-electron counting and the fluctuation theorem

Y. Utsumi, D. S. Golubev, M. Marthaler, K. Saito, T. Fujisawa, Gerd Schön

研究成果: Article査読

86 被引用数 (Scopus)

抄録

We investigate the direction-resolved full counting statistics of single-electron tunneling through a double quantum-dot system and compare with predictions of the fluctuation theorem (FT) for Markovian stochastic processes. Experimental data obtained for GaAs/GaAlAs heterostructures appear to violate the FT. After analyzing various potential sources for the discrepancy we conclude that the nonequilibrium shot noise of the quantum point contact electrometer, which is used to study the transport, induces strong dot-level fluctuations which significantly influence the tunneling statistics. Taking these modifications into account we find consistency with the FT.

本文言語English
論文番号125331
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
81
12
DOI
出版ステータスPublished - 2010 3 29
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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