Bonding energy of direct-bonded hydrophylic silicon wafers with nanoscale surface roughness at room temperature

Norihisa Miki; S. M. Spearing

doi:10.1109/SENSOR.2003.1217014

Bonding energy of direct-bonded hydrophylic silicon wafers with nanoscale surface roughness at room temperature

研究成果: Conference contribution

抜粋

Silicon-direct wafer bonding is a promising technology for manufacturing three-dimensional complex MEMS structures as well as SOI substrates. Amongst the various contributors to the bond quality, surface roughness at nanoscale plays a vital role. However, the effect of surface roughness on direct-bond quality has not been quantified. We conducted bonding experiments on silicon wafers with various surface roughness generated by chemical treatment. The bond quality was evaluated by measurement of the bonding energy. The surface roughness investigated by atomic force microscopy was directly correlated to the bond quality for the first time by means of the bearing ratio, which represents the ratio of the surface area lying above a given depth. The bearing ratio discussed herein is an appropriate criterion for the surface quality of silicon wafers to be direct-bonded.

元の言語	English
ホスト出版物のタイトル	TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
出版者	Institute of Electrical and Electronics Engineers Inc.
ページ	1311-1314
ページ数	4
巻	2
ISBN（印刷物）	0780377311, 9780780377318
DOI	https://doi.org/10.1109/SENSOR.2003.1217014
出版物ステータス	Published - 2003
外部発表	Yes
イベント	12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers - Boston, United States 継続期間: 2003 6 8 → 2003 6 12

Other

Other	12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers
国	United States
市	Boston
期間	03/6/8 → 03/6/12

フィンガープリント

ASJC Scopus subject areas

Electrical and Electronic Engineering

これを引用

Miki, N., & Spearing, S. M. (2003). Bonding energy of direct-bonded hydrophylic silicon wafers with nanoscale surface roughness at room temperature. ： TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers (巻 2, pp. 1311-1314). [1217014] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SENSOR.2003.1217014

Bonding energy of direct-bonded hydrophylic silicon wafers with nanoscale surface roughness at room temperature. / Miki, Norihisa; Spearing, S. M.

TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers. 巻 2 Institute of Electrical and Electronics Engineers Inc., 2003. p. 1311-1314 1217014.

研究成果: Conference contribution

Miki, N & Spearing, SM 2003, Bonding energy of direct-bonded hydrophylic silicon wafers with nanoscale surface roughness at room temperature. ： TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers. 巻数 2, 1217014, Institute of Electrical and Electronics Engineers Inc., pp. 1311-1314, 12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers, Boston, United States, 03/6/8. https://doi.org/10.1109/SENSOR.2003.1217014

Miki N, Spearing SM. Bonding energy of direct-bonded hydrophylic silicon wafers with nanoscale surface roughness at room temperature. ： TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers. 巻 2. Institute of Electrical and Electronics Engineers Inc. 2003. p. 1311-1314. 1217014 https://doi.org/10.1109/SENSOR.2003.1217014

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KW - Chemicals

KW - Manufacturing

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文献にアクセス

10.1109/SENSOR.2003.1217014