Bonding energy of direct-bonded hydrophylic silicon wafers with nanoscale surface roughness at room temperature

N. Miki, S. M. Spearing

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Silicon-direct wafer bonding is a promising technology for manufacturing three-dimensional complex MEMS structures as well as SOI substrates. Amongst the various contributors to the bond quality, surface roughness at nanoscale plays a vital role. However, the effect of surface roughness on direct-bond quality has not been quantified. We conducted bonding experiments on silicon wafers with various surface roughness generated by chemical treatment. The bond quality was evaluated by measurement of the bonding energy. The surface roughness investigated by atomic force microscopy was directly correlated to the bond quality for the first time by means of the bearing ratio, which represents the ratio of the surface area lying above a given depth. The bearing ratio discussed herein is an appropriate criterion for the surface quality of silicon wafers to be direct-bonded.

本文言語English
ホスト出版物のタイトルTRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
出版社Institute of Electrical and Electronics Engineers Inc.
ページ1311-1314
ページ数4
ISBN(電子版)0780377311, 9780780377318
DOI
出版ステータスPublished - 2003
外部発表はい
イベント12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers - Boston, United States
継続期間: 2003 6 82003 6 12

出版物シリーズ

名前TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
2

Other

Other12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers
国/地域United States
CityBoston
Period03/6/803/6/12

ASJC Scopus subject areas

  • 電子工学および電気工学

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