Calculation of the anisotropy of the hall mobility in n-type 4H- and 6H-SiC

T. Kinoshita, K. M. Itoh, J. Muto, M. Schadt, G. Pensl, K. Takeda

研究成果: Article

23 引用 (Scopus)

抜粋

We report on calculations of the anisotropy of the electron Hall mobility and its temperature dependence in single crystals of 6H- and 4H-SiC assuming parabolic conduction bands of cigar-shaped constant energy surfaces having three different effective masses in directions perpendicular to each other. Our results agree well with the experimentally determined anisotropic Hall mobility in 6H- and 4H-SiC.

元の言語English
ページ(範囲)295-298
ページ数4
ジャーナルMaterials Science Forum
264-268
発行部数PART 1
出版物ステータスPublished - 1998 12 1

    フィンガープリント

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Kinoshita, T., Itoh, K. M., Muto, J., Schadt, M., Pensl, G., & Takeda, K. (1998). Calculation of the anisotropy of the hall mobility in n-type 4H- and 6H-SiC. Materials Science Forum, 264-268(PART 1), 295-298.