Calculation of the anisotropy of the hall mobility in n-type 4H- and 6H-SiC

T. Kinoshita, Kohei M Itoh, J. Muto, M. Schadt, G. Pensl, K. Takeda

研究成果: Article

23 引用 (Scopus)

抄録

We report on calculations of the anisotropy of the electron Hall mobility and its temperature dependence in single crystals of 6H- and 4H-SiC assuming parabolic conduction bands of cigar-shaped constant energy surfaces having three different effective masses in directions perpendicular to each other. Our results agree well with the experimentally determined anisotropic Hall mobility in 6H- and 4H-SiC.

元の言語English
ページ(範囲)295-298
ページ数4
ジャーナルMaterials Science Forum
264-268
発行部数PART 1
出版物ステータスPublished - 1998

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Hall mobility
Anisotropy
anisotropy
Conduction bands
Interfacial energy
Tobacco Products
surface energy
conduction bands
Single crystals
temperature dependence
Electrons
single crystals
electrons
Temperature
Direction compound

ASJC Scopus subject areas

  • Materials Science(all)

これを引用

Kinoshita, T., Itoh, K. M., Muto, J., Schadt, M., Pensl, G., & Takeda, K. (1998). Calculation of the anisotropy of the hall mobility in n-type 4H- and 6H-SiC. Materials Science Forum, 264-268(PART 1), 295-298.

Calculation of the anisotropy of the hall mobility in n-type 4H- and 6H-SiC. / Kinoshita, T.; Itoh, Kohei M; Muto, J.; Schadt, M.; Pensl, G.; Takeda, K.

:: Materials Science Forum, 巻 264-268, 番号 PART 1, 1998, p. 295-298.

研究成果: Article

Kinoshita, T, Itoh, KM, Muto, J, Schadt, M, Pensl, G & Takeda, K 1998, 'Calculation of the anisotropy of the hall mobility in n-type 4H- and 6H-SiC', Materials Science Forum, 巻. 264-268, 番号 PART 1, pp. 295-298.
Kinoshita T, Itoh KM, Muto J, Schadt M, Pensl G, Takeda K. Calculation of the anisotropy of the hall mobility in n-type 4H- and 6H-SiC. Materials Science Forum. 1998;264-268(PART 1):295-298.
Kinoshita, T. ; Itoh, Kohei M ; Muto, J. ; Schadt, M. ; Pensl, G. ; Takeda, K. / Calculation of the anisotropy of the hall mobility in n-type 4H- and 6H-SiC. :: Materials Science Forum. 1998 ; 巻 264-268, 番号 PART 1. pp. 295-298.
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