Capacitive accelerometer using SBD-SOI structure

Yoshinori Matsumoto, Moritaka Iwakiri, Hidekazu Tanaka, Makoto Ishida, Tetsuro Nakamura

研究成果: Paper査読

3 被引用数 (Scopus)

抄録

A novel capacitive accelerometer using SDB-SOI(Silicon Direct Bonding - Silicon On Insulator) structure has been proposed. The mass and beams of the accelerometer were fabricated with single crystal silicon layer in the thickness of 10 μm. The beam was formed in Swastika shape to obtain longest beam in minimum area. The fabrication process was simplified by utilization of SOI structure. Seven kinds of accelerometers for different measurement ranges were integrated in the same chip. The capacitance changes of the accelerometers were detected by capacitance to voltage converter IC(TI28882D), and the output characteristics were evaluated.

本文言語English
ページ550-553
ページ数4
出版ステータスPublished - 1995 12 1
外部発表はい
イベントProceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2) - Stockholm, Sweden
継続期間: 1995 6 251995 6 29

Other

OtherProceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2)
CityStockholm, Sweden
Period95/6/2595/6/29

ASJC Scopus subject areas

  • 工学(全般)

フィンガープリント

「Capacitive accelerometer using SBD-SOI structure」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル