Carbon nanotube CVD-growth technology for future ULSI interconnects (invited)

Yuji Awano

研究成果: Conference contribution

抄録

The technological advancements of carbon nanotube (CNT) material technologies and the potential of metallic CNT vias for future ULSI interconnections were described. CNTs have ultra-high thermal conductivity, as high as that of diamond, and can solve the problem of heat removal in ULSIs. CNTs also offer the advantage of ballistic transport along the tube, which can be the solution to the high-resistance problem in scaled-down vias. It was found that the estimated current density of on nanotube reached about 2.0×108 A/cm2, which is two orders of magnitude higher than the current density for Cu.

本文言語English
ホスト出版物のタイトルDigest of Papers - Microprocesses and Nanotechnology 2004
ページ318-319
ページ数2
出版ステータスPublished - 2004 12月 1
外部発表はい
イベント2004 International Microprocesses and Nanotechnology Conference - Osaka, Japan
継続期間: 2004 10月 262004 10月 29

出版物シリーズ

名前Digest of Papers - Microprocesses and Nanotechnology 2004

Other

Other2004 International Microprocesses and Nanotechnology Conference
国/地域Japan
CityOsaka
Period04/10/2604/10/29

ASJC Scopus subject areas

  • 工学(全般)

フィンガープリント

「Carbon nanotube CVD-growth technology for future ULSI interconnects (invited)」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル