Carbon nanotube growth technologies using tantalum barrier layer for future ULSIs with Cu/Low-k interconnect processes

Masahiro Horibe, Mizuhisa Nihei, Daiyu Kondo, Akio Kawabata, Yuji Awano

    研究成果: Article査読

    43 被引用数 (Scopus)

    抄録

    We succeeded in developing carbon nanotube (CNT) vias specifically adapted for the copper interconnect process used in ultra large-scale integrated circuits. The CNTs were grown selectively on titanium films using Co catalyst films. The use of tantalum enabled CNTs to be grown on Cu lines and prevented any increase in the sheet resistance of the Cu lines. A Cu wire/CNT via/Cu wire structure was fabricated and low resistance of the via was demonstrated. In addition, tests showed that a high current density of about 106 A/cm2 flowed into the CNT via for 125 hours.

    本文言語English
    ページ(範囲)5309-5312
    ページ数4
    ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    44
    7 A
    DOI
    出版ステータスPublished - 2005 7 8

    ASJC Scopus subject areas

    • 工学(全般)
    • 物理学および天文学(全般)

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