Carbon nanotube via interconnect technologies: Size-classified catalyst nanoparticles and low-resistance ohmic contact formation

Y. Awano, S. Sato, D. Kondo, M. Ohfuti, A. Kawabata, M. Nihei, N. Yokoyama

研究成果: Article査読

77 被引用数 (Scopus)

抄録

We propose a new approach to fabricating carbon nanotube (CNT) via interconnects for future LSIs, which uses preformed catalyst nanoparticles to grow the CNTs. A newly designed impactor provided size-classified catalyst particles. For the new approach, we employ a TiN contact layer which is more resistant to oxidation and enables us to form a lower resistance ohmic contact between CNTs and wiring layers. The resultant CNT-via resistance was 0.59 Ω for 2-μm vias, which is the smallest ever reported. We also study the CNT nucleation process using molecular dynamics and discuss how to remove amorphous carbon from the nucleation process.

本文言語English
ページ(範囲)3611-3616
ページ数6
ジャーナルPhysica Status Solidi (A) Applications and Materials Science
203
14
DOI
出版ステータスPublished - 2006 11月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 電子工学および電気工学
  • 材料化学

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