Carbon nanotube via interconnects with large current carrying capacity

Mizuhisa Nihei, Akio Kawabata, Shintaro Sato, Tatsuhiro Nozue, Takashi Hyakushima, Masaaki Norimatsu, Tomo Murakami, Daiyu Kondo, Mari Ohfuti, Yuji Awano

研究成果: Conference contribution

6 被引用数 (Scopus)

抄録

We fabricated a carbon nanotube (CNT) via interconnect and evaluated its electrical properties. We found that the CNT via resistance was independent of temperatures, which suggests that the carrier transport is ballistic. From the via height dependence of the resistance, the electron mean free path was estimated to be about 80 nm, which is similar to the via height predicted for hp32-nm technology node. This indicates that it will be possible to realize CNT vias with ballistic transport for hp32-nm technology node and below. It was also found that a CNT via was able to sustain a current density as high as 5.0×106 A/cm6 at 105 °C for 100 hours without any deterioration.

本文言語English
ホスト出版物のタイトルICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
ページ541-543
ページ数3
DOI
出版ステータスPublished - 2008 12 1
外部発表はい
イベント2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
継続期間: 2008 10 202008 10 23

出版物シリーズ

名前International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
CountryChina
CityBeijing
Period08/10/2008/10/23

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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