Carbon nanotube vias for multilevel interconnects using CMP techniques

Mizuhisa Nihei, Akio Kawabata, Shintaro Sato, Daiyu Kondo, Masahiro Horibe, Hiroki Shioya, Taisuke Iwai, Yuji Awano

研究成果: Paper査読

抄録

We have developed carbon nanotube (CNT) vias using thermal chemical vapor deposition (CVD) at a growth temperature of 450°C with cobalt catalysts, titanium carbide ohmic contacts, and tantalum barrier layers on copper wiring. The total resistance of the CNT via comprised of about 1, 000 tubes, was three orders of magnitude lower than that of one CNT, indicating that the current flows in parallel, through the tubes. We have also demonstrated a mechanical polishing technique for CNT vias. The 1-μm-high outprojecting CNTs were polished using a diamond slurry of 30-μm-diameter particles mixed in oil at pressures below 18 kPa. Because the adhesion strength of the CNTs was about 5.5 MPa, the CNT vias were able to withstand the mechanical stress applied during the polishing process.

本文言語English
ページ527-534
ページ数8
出版ステータスPublished - 2005 12月 1
外部発表はい
イベント10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005 - Fremont, CA, United States
継続期間: 2005 2月 232005 2月 25

Other

Other10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005
国/地域United States
CityFremont, CA
Period05/2/2305/2/25

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学

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