Carbon nanotubes for VLSI: Interconnect and transistor applications

Y. Awano, S. Sato, M. Nihei, T. Sakai, Y. Ohno, T. Mizutani

    研究成果: Conference contribution

    1 被引用数 (Scopus)

    抄録

    We report the present status of Carbon Nanotube (CNT) CVD material technologies and their applications for via interconnects and FETs for VLSI. We succeeded in growing multi-walled CNTs (MWNTs) with the highest shell density (as high as 1013/cm2) and in fabricating via interconnects with high robustness against a high current density. We also report a Si-process compatible technique to control carrier polarity of Single-walled CNT (SWNT) FETs by utilizing fixed charges introduced by the gate oxide. High-performance p- and n-type CNT-FETs and CMOS inverters with stability in air have been realized.

    本文言語English
    ホスト出版物のタイトルProceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
    ページ10-11
    ページ数2
    DOI
    出版ステータスPublished - 2011 7 11
    イベント2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan, Province of China
    継続期間: 2011 4 252011 4 27

    出版物シリーズ

    名前International Symposium on VLSI Technology, Systems, and Applications, Proceedings

    Other

    Other2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
    CountryTaiwan, Province of China
    CityHsinchu
    Period11/4/2511/4/27

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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