Carrier-carrier interaction in single In0.5Ga0.5As quantum dots at room temperature investigated by near-field scanning optical microscope

K. Matsuda; K. Ikeda; T. Saiki; H. Saito; K. Nishi

doi:10.1063/1.1609662

Carrier-carrier interaction in single In_0.5Ga_0.5As quantum dots at room temperature investigated by near-field scanning optical microscope

K. Matsuda, K. Ikeda, T. Saiki, H. Saito, K. Nishi

電気情報工学科

研究成果: Article › 査読

37 被引用数 (Scopus)

抄録

A carrier-carrier interaction in self-assembled In_0.5Ga _0.5As quantum dots (QD) at room temperature was described. The spectral shift and linewidth broadening of ground state emission as a function of the excitation density were also investigated. The near-field single quantum dot photoluminescence spectroscopy was used.

本文言語	English
ページ（範囲）	2250-2252
ページ数	3
ジャーナル	Applied Physics Letters
巻	83
号	11
DOI	https://doi.org/10.1063/1.1609662
出版ステータス	Published - 2003 9月 15

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.1609662

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引用スタイル

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AU - Nishi, K.

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