Carrier transport and stress engineering in advanced nanoscale transistors from (100) and (110) Transistors to carbon nanotube FETs and beyond

Ken Uchida, Masumi Saitoh, Shigeki Kobayashi

    研究成果: Conference contribution

    23 被引用数 (Scopus)

    抄録

    Carrier transport in advanced MOSFETs is reviewed. First, electron and hole mobility in (110) MOSFETs are compared with those in (100) MOSFETs. Stress engineering is discussed in terms of energy split and effective mass due to the stress. The optimization of multi-gate MOSFET structure is then considered. As an example of ballistic MOSFETs, the performance and stress engineering of CNT FETs with doped junctions are investigated.

    本文言語English
    ホスト出版物のタイトル2008 IEEE International Electron Devices Meeting, IEDM 2008
    DOI
    出版ステータスPublished - 2008 12月 1
    イベント2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
    継続期間: 2008 12月 152008 12月 17

    出版物シリーズ

    名前Technical Digest - International Electron Devices Meeting, IEDM
    ISSN(印刷版)0163-1918

    Other

    Other2008 IEEE International Electron Devices Meeting, IEDM 2008
    国/地域United States
    CitySan Francisco, CA
    Period08/12/1508/12/17

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • 電子工学および電気工学
    • 材料化学

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