Carrier transport in (110) nMOSFETs: Subband structures, non-parabolicity, mobility characteristics, and uniaxial stress engineering

Ken Uchida, Atsuhiro Kinoshita, Masumi Saitoh

    研究成果: Conference contribution

    36 引用 (Scopus)
    元の言語English
    ホスト出版物のタイトル2006 International Electron Devices Meeting Technical Digest, IEDM
    DOI
    出版物ステータスPublished - 2006 12 1
    イベント2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
    継続期間: 2006 12 102006 12 13

    出版物シリーズ

    名前Technical Digest - International Electron Devices Meeting, IEDM
    ISSN(印刷物)0163-1918

    Other

    Other2006 International Electron Devices Meeting, IEDM
    United States
    San Francisco, CA
    期間06/12/1006/12/13

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

    これを引用

    Uchida, K., Kinoshita, A., & Saitoh, M. (2006). Carrier transport in (110) nMOSFETs: Subband structures, non-parabolicity, mobility characteristics, and uniaxial stress engineering. : 2006 International Electron Devices Meeting Technical Digest, IEDM [4154378] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346943