InGaAs/GaAs quantum dot structures grown on the tetrahedral-shaped-recesses (TSR) on the GaAs (111)B substrate were studied by means of cathodoluminescence (CL). The luminescence from quantum dots (QDs) and quantum wells (QWs) was resolved spatially by monochromatic CL images. TSRs of various sizes and spacing were observed. The optimum conditions of the QD fabrication are discussed.
|ジャーナル||Molecular Crystals and Liquid Crystals Science and Technology Section B: Nonlinear Optics|
|出版ステータス||Published - 1997 12 1|
|イベント||Proceedings of the 1997 International Symposium on Quantum Structures for Photonic Applications, QSPA'97 - Sendai, Jpn|
継続期間: 1997 3 6 → 1997 3 8
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