Cathodoluminescence study of InGaAs/GaAs quantum dots formed on the tetrahedral-shaped recesses

Takashi Sekiguchi, Yoshiki Sakuma, Yuji Awano, Naoki Yokoyama

研究成果: Conference article査読

抄録

InGaAs/GaAs quantum dot structures grown on the tetrahedral-shaped-recesses (TSR) on the GaAs (111)B substrate were studied by means of cathodoluminescence (CL). The luminescence from quantum dots (QDs) and quantum wells (QWs) was resolved spatially by monochromatic CL images. TSRs of various sizes and spacing were observed. The optimum conditions of the QD fabrication are discussed.

本文言語English
ページ(範囲)311-314
ページ数4
ジャーナルMolecular Crystals and Liquid Crystals Science and Technology Section B: Nonlinear Optics
18
2-4
出版ステータスPublished - 1997 12 1
外部発表はい
イベントProceedings of the 1997 International Symposium on Quantum Structures for Photonic Applications, QSPA'97 - Sendai, Jpn
継続期間: 1997 3 61997 3 8

ASJC Scopus subject areas

  • 制御およびシステム工学
  • 凝縮系物理学

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