Cation sublattice stacking faults in Cu-rich chalcopyrite CuInSe2

Olof Hellman, Shigeru Niki, P. J. Fons

研究成果: Article査読

抄録

Using transmission electron microscopy, we investigate the microstructure of CuInSe2 films grown by molecular beam epitaxy on GaAs substrates under Cu-rich conditions. We find both a transition towards c-axis oriented growth as the film gets thicker, and a significant density of stacking faults on the cation sublattice in the chalcopyrite structure. These stacking faults are found to extend large distances in the plane of the film, and are not found to be present in samples not grown in Cu-rich conditions.

本文言語English
ページ(範囲)49-54
ページ数6
ジャーナルDenshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
60
3
出版ステータスPublished - 1996 1 1
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子工学および電気工学

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