Changes in electronic structure and chemical bonding upon crystallization of the phase change material GeSb2Te4

A. Klein; H. Dieker; B. Späth; P. Fons; A. Kolobov; C. Steimer; M. Wuttig

doi:10.1103/PhysRevLett.100.016402

Changes in electronic structure and chemical bonding upon crystallization of the phase change material GeSb2Te4

A. Klein, H. Dieker, B. Späth, P. Fons, A. Kolobov, C. Steimer, M. Wuttig

研究成果: Article › 査読

48 被引用数 (Scopus)

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High-resolution photoelectron spectroscopy of in situ prepared films of GeSb2Te4 reveals significant differences in electronic and chemical structure between the amorphous and the crystalline phase. Evidence for two different chemical environments of Ge and Sb in the amorphous structure is found. This observation can explain the pronounced property contrast between both phases and provides new insight into the formation of the amorphous state.

本文言語	English
論文番号	016402
ジャーナル	Physical review letters
巻	100
号	1
DOI	https://doi.org/10.1103/PhysRevLett.100.016402
出版ステータス	Published - 2008 1月 10
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（全般）

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10.1103/PhysRevLett.100.016402

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AU - Kolobov, A.

AU - Steimer, C.

AU - Wuttig, M.

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AB - High-resolution photoelectron spectroscopy of in situ prepared films of GeSb2Te4 reveals significant differences in electronic and chemical structure between the amorphous and the crystalline phase. Evidence for two different chemical environments of Ge and Sb in the amorphous structure is found. This observation can explain the pronounced property contrast between both phases and provides new insight into the formation of the amorphous state.

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Changes in electronic structure and chemical bonding upon crystallization of the phase change material GeSb2Te4

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