抄録
MOSFET memories with silicon nano-crystal floating gates have recently attracted much attention as future memory devices with low power consumption and high writing endurance. In order to obtain higher packing densities, the small dimension of memory devices is essential. It has been reported that the threshold voltage shift becomes larger as the channel width of MOSFET memory is narrower. However, it is easily speculated that as the channel width becomes narrower, the distribution of threshold voltage shift also becomes larger. In this paper, the width dependence of threshold voltage shift and its distribution is evaluated in narrow channel MOSFET memories with silicon nano-crystal floating gates. It is indicated that the precise control of silicon nano-crystal distribution is necessary for small memory devices.
| 本文言語 | English |
|---|---|
| ホスト出版物のタイトル | 1999 International Microprocesses and Nanotechnology Conference |
| 出版社 | Institute of Electrical and Electronics Engineers Inc. |
| ページ | 86-87 |
| ページ数 | 2 |
| ISBN（電子版） | 4930813972, 9784930813978 |
| DOI | |
| 出版ステータス | Published - 1999 1月 1 |
| 外部発表 | はい |
| イベント | 1999 International Microprocesses and Nanotechnology Conference - Yokohama, Japan 継続期間: 1999 7月 6 → 1999 7月 8 |
Other
| Other | 1999 International Microprocesses and Nanotechnology Conference |
|---|---|
| 国/地域 | Japan |
| City | Yokohama |
| Period | 99/7/6 → 99/7/8 |
ASJC Scopus subject areas
- 電子工学および電気工学
- 電子材料、光学材料、および磁性材料