Characteristics distribution of narrow channel MOSFET memories with silicon nano-crystal floating gates

E. Nagata, N. Takahashi, Hiroki Ishikuro, T. Hiramoto

研究成果: Conference contribution

抄録

MOSFET memories with silicon nano-crystal floating gates have recently attracted much attention as future memory devices with low power consumption and high writing endurance. In order to obtain higher packing densities, the small dimension of memory devices is essential. It has been reported that the threshold voltage shift becomes larger as the channel width of MOSFET memory is narrower. However, it is easily speculated that as the channel width becomes narrower, the distribution of threshold voltage shift also becomes larger. In this paper, the width dependence of threshold voltage shift and its distribution is evaluated in narrow channel MOSFET memories with silicon nano-crystal floating gates. It is indicated that the precise control of silicon nano-crystal distribution is necessary for small memory devices.

本文言語English
ホスト出版物のタイトル1999 International Microprocesses and Nanotechnology Conference
出版社Institute of Electrical and Electronics Engineers Inc.
ページ86-87
ページ数2
ISBN(電子版)4930813972, 9784930813978
DOI
出版ステータスPublished - 1999 1月 1
外部発表はい
イベント1999 International Microprocesses and Nanotechnology Conference - Yokohama, Japan
継続期間: 1999 7月 61999 7月 8

Other

Other1999 International Microprocesses and Nanotechnology Conference
国/地域Japan
CityYokohama
Period99/7/699/7/8

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料

フィンガープリント

「Characteristics distribution of narrow channel MOSFET memories with silicon nano-crystal floating gates」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル