Characterization of CIGS thin films and solar cells grown with a plasma-cracked Se source

Shogo Ishizuka, Akimasa Yamada, Paul Fons, Shigeru Niki

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

The variation observed in rf-plasma cracked radical Se (R-Se) source grown Cu(In, Ga)Se 2 (CIGS) film properties and conventional evaporative Se (E-Se) source grown CIGS film properties was studied for the development of industrial production techniques of evaporated CIGS films and CIGS texture control techniques, which are important for the optimization of the CIGS/buffer layer interface to yield high cell and module efficiencies using various types of buffer layer materials as well as for the study of surface and interface physics of CIGS solar cells. R-Se grown CIGS films exhibit distinctive characteristics such as highly dense surfaces and large grain size in comparison with E-Se grown CIGS films. On the other hand, R-Se grown (In, Ga) 2Se 3 precursor films was similar to E-Se grown films fabricated with the Se to metal flux ratio (P [Se]/[In+Ga]) of around 6, though the nominal P [Se]/[In+Ga] used for a R-Se source was less than 0.5, implying that the use of a R-Se source can demonstrate a significant reduction of the raw material consumption of Se. In the present work, it is shown that the Se source conditions used for the CIGS growth have a variety of important effects on the growth kinetics and concomitant solar cell properties.

本文言語English
ホスト出版物のタイトルProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
ページ38-40
ページ数3
DOI
出版ステータスPublished - 2011 12月 1
外部発表はい
イベント37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
継続期間: 2011 6月 192011 6月 24

出版物シリーズ

名前Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN(印刷版)0160-8371

Other

Other37th IEEE Photovoltaic Specialists Conference, PVSC 2011
国/地域United States
CitySeattle, WA
Period11/6/1911/6/24

ASJC Scopus subject areas

  • 制御およびシステム工学
  • 産業および生産工学
  • 電子工学および電気工学

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