Characterization of oxygen impurities in thermally evaporated LaF 3 thin films suitable for oxygen sensor

M. Vijayakumar, S. Selvasekarapandian, T. Gnanasekaran, Shinobu Fujihara, Shinnosuke Koji

研究成果: Article査読

18 被引用数 (Scopus)

抄録

The lanthanum fluoride thin films has been prepared by means of thermal evaporation method. The XRD analysis shows the formation of polycrystalline hexagonal LaF 3 . The depth profile X-ray photoelectron spectroscopy (XPS) analysis shows the presence of oxide ions throughout the films. The formation of lanthanum oxyfluoride (LaOF) has been identified. The [O]/[F] ratio has been found to be 0.35 which is higher than the previously reported values of LaF 3 film applied for the oxygen sensor.

本文言語English
ページ(範囲)125-130
ページ数6
ジャーナルApplied Surface Science
222
1-4
DOI
出版ステータスPublished - 2004 1 30

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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