Characterization of quaternary (Cr,Al)N-based films synthesized by the cathodic arc method

H. Hasegawa, K. Ohashi, S. Tsukamoto, T. Sato, T. Suzuki

研究成果: Article査読

7 被引用数 (Scopus)

抄録

Chromium aluminum nitride based films were synthesized by the cathodic arc method using an alloy cathode, and annealed in a vacuum chamber at 800, 900 and 1000 °C. XRD analyses showed that the (Cr,Al,Si,Y)N films maintained a cubic phase up to 800 °C, but changed to a mixed phase after post-annealing at temperatures of more than 900 °C. Cr2N segregation and partial transformation from a cubic to hexagonal phase at over 800 °C were confirmed for (Cr,Al,Si)N and (Cr,Al,Y)N. The lattice parameters for cubic (Cr,Al,Si)N and (Cr,Al,Y)N (0.416 nm) decreased to 0.411 nm and 0.413 nm, respectively, after annealing at 900 °C. The lattice parameter for (Cr,Al,Si,Y)N changed from 0.417 nm to 0.413 nm after annealing at 900 °C. The microhardness of (Cr,Al,Y)N was kept constant at 800 °C, whereas that of (Cr,Al,Si)N and (Cr,Al,Si,Y)N increased slightly between 800 and 900 °C. In this study, hardness, microstructure and lattice parameters were analyzed and discussed as a function of the annealing temperature.

本文言語English
ページ(範囲)786-789
ページ数4
ジャーナルSurface and Coatings Technology
202
4-7
DOI
出版ステータスPublished - 2007 12 15

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

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