Circuit and device interactions for 3D integration using inductive coupling

研究成果: Conference contribution

2 引用 (Scopus)

抄録

This paper presents a ThruChip Interface using inductive coupling and Highly Doped Silicon Via for power delivery. Design automation, manufacturability, applications, and scaling scenario are discussed.

元の言語English
ホスト出版物のタイトルTechnical Digest - International Electron Devices Meeting, IEDM
出版者Institute of Electrical and Electronics Engineers Inc.
ページ18.6.1-18.6.4
2015-February
エディションFebruary
DOI
出版物ステータスPublished - 2015 2 20
イベント2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
継続期間: 2014 12 152014 12 17

Other

Other2014 60th IEEE International Electron Devices Meeting, IEDM 2014
United States
San Francisco
期間14/12/1514/12/17

Fingerprint

Silicon
automation
delivery
Automation
scaling
Networks (circuits)
silicon
interactions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

これを引用

Kuroda, T. (2015). Circuit and device interactions for 3D integration using inductive coupling. : Technical Digest - International Electron Devices Meeting, IEDM (February 版, 巻 2015-February, pp. 18.6.1-18.6.4). [7047079] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7047079

Circuit and device interactions for 3D integration using inductive coupling. / Kuroda, Tadahiro.

Technical Digest - International Electron Devices Meeting, IEDM. 巻 2015-February February. 編 Institute of Electrical and Electronics Engineers Inc., 2015. p. 18.6.1-18.6.4 7047079.

研究成果: Conference contribution

Kuroda, T 2015, Circuit and device interactions for 3D integration using inductive coupling. : Technical Digest - International Electron Devices Meeting, IEDM. February Edn, 巻. 2015-February, 7047079, Institute of Electrical and Electronics Engineers Inc., pp. 18.6.1-18.6.4, 2014 60th IEEE International Electron Devices Meeting, IEDM 2014, San Francisco, United States, 14/12/15. https://doi.org/10.1109/IEDM.2014.7047079
Kuroda T. Circuit and device interactions for 3D integration using inductive coupling. : Technical Digest - International Electron Devices Meeting, IEDM. February 版 巻 2015-February. Institute of Electrical and Electronics Engineers Inc. 2015. p. 18.6.1-18.6.4. 7047079 https://doi.org/10.1109/IEDM.2014.7047079
Kuroda, Tadahiro. / Circuit and device interactions for 3D integration using inductive coupling. Technical Digest - International Electron Devices Meeting, IEDM. 巻 2015-February February. 版 Institute of Electrical and Electronics Engineers Inc., 2015. pp. 18.6.1-18.6.4
@inproceedings{5727d171627a4e6d8dd196c00bc00d09,
title = "Circuit and device interactions for 3D integration using inductive coupling",
abstract = "This paper presents a ThruChip Interface using inductive coupling and Highly Doped Silicon Via for power delivery. Design automation, manufacturability, applications, and scaling scenario are discussed.",
author = "Tadahiro Kuroda",
year = "2015",
month = "2",
day = "20",
doi = "10.1109/IEDM.2014.7047079",
language = "English",
volume = "2015-February",
pages = "18.6.1--18.6.4",
booktitle = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
edition = "February",

}

TY - GEN

T1 - Circuit and device interactions for 3D integration using inductive coupling

AU - Kuroda, Tadahiro

PY - 2015/2/20

Y1 - 2015/2/20

N2 - This paper presents a ThruChip Interface using inductive coupling and Highly Doped Silicon Via for power delivery. Design automation, manufacturability, applications, and scaling scenario are discussed.

AB - This paper presents a ThruChip Interface using inductive coupling and Highly Doped Silicon Via for power delivery. Design automation, manufacturability, applications, and scaling scenario are discussed.

UR - http://www.scopus.com/inward/record.url?scp=84938280683&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84938280683&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2014.7047079

DO - 10.1109/IEDM.2014.7047079

M3 - Conference contribution

AN - SCOPUS:84938280683

VL - 2015-February

SP - 18.6.1-18.6.4

BT - Technical Digest - International Electron Devices Meeting, IEDM

PB - Institute of Electrical and Electronics Engineers Inc.

ER -