Coherent gigahertz phonons in Ge2Sb2Te5 phase-change materials

Muneaki Hase, Paul Fons, Alexander V. Kolobov, Junji Tominaga

研究成果: Article査読

抄録

Using ≃ 40 fs ultrashort laser pulses, we investigate the picosecond acoustic response from a prototypical phase change material, thin Ge2Sb2Te5 (GST) films with various thicknesses. After excitation with a 1.53 eV-energy pulse with a fluence of ≃ 5 mJ cm?2, the time-resolved reflectivity change exhibits transient electronic response, followed by a combination of exponential-like strain and coherent acoustic phonons in the gigahertz (GHz) frequency range. The time-domain shape of the coherent acoustic pulse is well reproduced by the use of the strain model by Thomsen et al 1986 (Phys. Rev. B 34 4129). We found that the decay rate (the inverse of the relaxation time) of the acoustic phonon both in the amorphous and in the crystalline phases decreases as the film thickness increases. The thickness dependence of the acoustic phonon decay is well modeled based on both phonon-defect scattering and acoustic phonon attenuation at the GST/Si interface, and it is revealed that those scattering and attenuation are larger in crystalline GST films than those in amorphous GST films.

本文言語English
論文番号485402
ジャーナルJournal of Physics Condensed Matter
27
48
DOI
出版ステータスPublished - 2015 11 16
外部発表はい

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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