Coherent phonon study of (GeTe)l(Sb2Te3)m interfacial phase change memory materials

Kotaro Makino; Yuta Saito; Paul Fons; Alexander V. Kolobov; Takashi Nakano; Junji Tominaga; Muneaki Hase

doi:10.1063/1.4897997

Coherent phonon study of (GeTe)_l(Sb₂Te₃)_m interfacial phase change memory materials

Kotaro Makino, Yuta Saito, Paul Fons, Alexander V. Kolobov, Takashi Nakano, Junji Tominaga, Muneaki Hase

研究成果: Article › 査読

13 被引用数 (Scopus)

抄録

The time-resolved reflectivity measurements were carried out on the interfacial phase change memory (iPCM) materials ([(GeTe)₂(Sb₂Te₃)₄]₈ and [(GeTe)₂(Sb₂Te₃)₁]₂₀) as well as conventional Ge₂Sb₂Te₅ alloy at room temperature and above the RESET-SET phase transition temperature. In the high-temperature phase, coherent phonons were clearly observed in the iPCM samples while drastic attenuation of coherent phonons was induced in the alloy. This difference strongly suggests the atomic rearrangement during the phase transition in iPCMs is much smaller than that in the alloy. These results are consistent with the unique phase transition model in which a quasi-one-dimensional displacement of Ge atoms occurs for iPCMs and a conventional amorphous-crystalline phase transition takes place for the alloy.

本文言語	English
論文番号	151902
ジャーナル	Applied Physics Letters
巻	105
号	15
DOI	https://doi.org/10.1063/1.4897997
出版ステータス	Published - 2014 10月 13
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

文献へのアクセス

10.1063/1.4897997

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引用スタイル

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abstract = "The time-resolved reflectivity measurements were carried out on the interfacial phase change memory (iPCM) materials ([(GeTe)2(Sb2Te3)4]8 and [(GeTe)2(Sb2Te3)1]20) as well as conventional Ge2Sb2Te5 alloy at room temperature and above the RESET-SET phase transition temperature. In the high-temperature phase, coherent phonons were clearly observed in the iPCM samples while drastic attenuation of coherent phonons was induced in the alloy. This difference strongly suggests the atomic rearrangement during the phase transition in iPCMs is much smaller than that in the alloy. These results are consistent with the unique phase transition model in which a quasi-one-dimensional displacement of Ge atoms occurs for iPCMs and a conventional amorphous-crystalline phase transition takes place for the alloy.",

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AU - Makino, Kotaro

AU - Saito, Yuta

AU - Fons, Paul

AU - Kolobov, Alexander V.

AU - Nakano, Takashi

AU - Tominaga, Junji

AU - Hase, Muneaki

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AB - The time-resolved reflectivity measurements were carried out on the interfacial phase change memory (iPCM) materials ([(GeTe)2(Sb2Te3)4]8 and [(GeTe)2(Sb2Te3)1]20) as well as conventional Ge2Sb2Te5 alloy at room temperature and above the RESET-SET phase transition temperature. In the high-temperature phase, coherent phonons were clearly observed in the iPCM samples while drastic attenuation of coherent phonons was induced in the alloy. This difference strongly suggests the atomic rearrangement during the phase transition in iPCMs is much smaller than that in the alloy. These results are consistent with the unique phase transition model in which a quasi-one-dimensional displacement of Ge atoms occurs for iPCMs and a conventional amorphous-crystalline phase transition takes place for the alloy.

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